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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM6336JPT
CURRENT 5.8 Ampere
FEATURE
* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
DD
D
D
5
1
SS
S
G
4
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
CHM6336JPT
Units
VDSS VGSS ID IDM PD TJ TSTG
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
60
V V A A mW C C
20
5.8 24 2500 -55 to 150 -55 to 150
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W
2007-11
RATING CHARACTERISTIC ( CHM6336JPT )
Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
60 1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VGS=10V, ID=5.8A VGS=4.5V, ID=4.7A
1 33 41 11
3 41
V m
55 S
Forward Transconductance
VDS =15V, ID = 5.8. A
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30V, VGS = 0V, f = 1.0 MHz 750 105 65 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q gd ton tr toff tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=30V, ID=5.8A VGS=10V V DD= 30V I D = 4.4A , VGS = 10 V RGEN= 1
22 3.0 4.5 15 4 37 5
29 nC
30 15 80 15 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1) (Note 2)
5.8 1.2
A V
Drain-Source Diode Forward Voltage IS = 2A , VGS = 0 V
RATING CHARACTERISTIC CURVES ( CHM6336JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
20 10
Figure 2. Transfer Characteristics
V G S =1 0 , 8 , 6 , 3 V
16 8
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
12
6
8
4 J=125C T 2
TJ=-55C TJ=25C
4
0
0
0.5
1.0 1.5 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V)
2.5
0
0
3.0 4.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V)
5.0
Figure 3. Gate Charge
10 VDS=30V ID=5.8A 2.2
Figure 4. On-Resistance Variation with Temperature
VGS=10V ID=5.8A
VGS , GATE TO SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
8
1.9
R DS(on) , NO RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24
0.4 -100
-50
0 50 100 TJ , JUNCTION T EMPERATURE (C)
150
200
Figure 5. Gate Threshold Variation with Temperature
1.3 1.2 VDS=VGS ID=250uA
Vth , NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1 1.0 0.9 0.8
0.7 0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)
125
150

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